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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Authors:  Wang, Liancheng;  Guo, Enqing;  Liu, Zhiqiang;  Yi, Xiaoyan;  Wang, Guohong;  Wang, L.(wanglc@semi.ac.cn)
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Gallium Nitride  Leakage Currents  Light Emission  Light Emitting Diodes  Metallizing  Polarization  Testing  Water Analysis  
First principles study of the electronic properties of twinned SiC nanowires 期刊论文
JOURNAL OF NANOPARTICLE RESEARCH, 2011, 卷号: 13, 期号: 1, 页码: 185-191
Authors:  Wang ZG;  Wang SJ;  Zhang CL;  Li JB;  Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn
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Twinned Sic Nanowires  Electronic Properties  Ab Initio  Modeling And Simulation  Silicon-carbide Nanowires  Field-emission Properties  Molecular-beam Epitaxy  Inas Nanowires  Growth  Nanotubes  Nitride  Diffusion  Nanorods  Energy  
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Phonon and Elastic Instabilities in Zincblende TlN under Hydrostatic Pressure from First Principles Calculations 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 10, 页码: 100503
Authors:  Shi, LW;  Duan, YF;  Yang, XQ;  Tang, G;  Shi, LW (reprint author), China, Univ Min & Technol, Dept Phys, Sch Sci, Xuzhou 221116, Peoples R China,Liweishi@semi.ac.cn
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Ab-initio  State Properties  v Compounds  1st-principles  Nitride  Bcc  
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
PHYSICS LETTERS A, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
Authors:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn
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First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
Authors:  Pan X;  Wei M;  Yang CB;  Xiao HL;  Wang CM;  Wang XL;  Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
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Sandwich Structure  Stress  Aluminum Nitride  Gallium Nitride  Silicon  Phonon Deformation Potentials  Wurtzite Aln  Silicon  Stress  Transistors  Epitaxy  Layers  
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas