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GaN基激光器外延生长 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2020
Authors:  刘双韬
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无权访问的条目 学位论文
Authors:  刘杨
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Si杂质诱导 InGaAs_AlGaAs 高功率半导体激光器量子阱混杂的研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2020
Authors:  刘翠翠
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无权访问的条目 学位论文
Authors:  刘凯宝
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Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi 2 Se 3 期刊论文
Journal of Physics Condensed Matter, 2019, 卷号: 31, 期号: 41, 页码: 415702
Authors:  Y M Wang ;   J L Yu ;   X L Zeng ;   Y H Chen ;   Y Liu ;   S Y Cheng ;   Y F Lai ;   C M Yin ;   K He 7 ;   Q K Xue
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Interface-driven unusual anomalous Hall effect in Mn x Ga/Pt bilayers 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 100, 页码: 184410
Authors:  K. K. Meng ;   L. J. Zhu;   Z. H. Jin;   E. K. Liu;   X. P. Zhao;   I. A. Malik;   Z. G. Fu;   Y. Wu;   J. Miao;   X. G. Xu;   J. X. Zhang;   J. H. Zhao;   Y. Jiang
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Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
Authors:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
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The intrinsic temperature-dependent Raman spectra of graphite in the temperature range from 4K to 1000K 期刊论文
Carbon, 2019, 卷号: 152, 页码: 451-458
Authors:  H.-N. Liu;  X. Cong;  M.-L. Lin;  P.-H. Tan
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