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Ferroelectric memristive effect in BaTiO3 epitaxial thin films 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 36, 页码: 365102
Authors:  Chen, X;  Jia, CH;  Chen, YH;  Yang, G;  Zhang, WF
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Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO3:Nb/ZnO heterojunctions 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 4, 页码: 043501
Authors:  Jia, CH;  Sun, XW;  Li, GQ;  Chen, YH;  Zhang, WF
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Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 12, 页码: 125303
Authors:  Chen, XW;  Jia, CH;  Chen, YH;  Wang, HT;  Zhang, WF
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Negative differential resistance and resistance switching behaviors in BaTiO3 thin films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 20
Authors:  Yang, G;  Jia, CH;  Chen, YH;  Chen, X;  Zhang, WF
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Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 391, 页码: 111-115
Authors:  Wang, HT;  Jia, CH;  Xu, JK;  Chen, YH;  Chen, XW;  Zhang, WF
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Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 卷号: 106, 期号: 3, 页码: 655-659
Authors:  Jia, CH;  Chen, YH;  Zhang, B;  Liu, XL;  Yang, SY;  Zhang, WF;  Wang, ZG
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Tailoring the in-plane epitaxial relationship of InN films on (1 1 1)SrTiO3 substrates by substrate pretreatment 期刊论文
APPLIED SURFACE SCIENCE, 2012, 卷号: 258, 期号: 7, 页码: 2927-2930
Authors:  Jia, CH;  Chen, YH;  Zhang, B;  Liu, XL;  Yang, SY;  Zhang, WF;  Wang, ZG
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Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 卷号: 23, 期号: 1, 页码: Art. No. 015801
Authors:  Liu GH (Liu Genhua);  Chen YH (Chen Yonghai);  Jia CH (Jia Caihong);  Hao GD (Hao Guo-Dong);  Wang ZG (Wang Zhanguo);  Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
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Narrow-gap Semiconductor  Inversion-asymmetry  Quantum Dots  Band  States  
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 319, 期号: 1, 页码: 114-117
Authors:  Zhang BA;  Song HP;  Wang J;  Jia CH;  Liu JM;  Xu XQ;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
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Anisotropy  Crystal Morphology  Metalorganic Chemical Vapor Deposition  A-plane Inn  Indium Nitride  Movpe Growth  Cubic Inn  Sapphire  Gan  Mbe  
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 48, 页码: Art. No. 485102
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Jia CH (Jia C. H.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.);  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouxl06@semi.ac.cn
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Dependence  Spectra