SEMI OpenIR

Browse/Search Results:  1-10 of 33 Help

Selected(0)Clear Items/Page:    Sort:
Three-region characteristic temperature in p-doped quantum dot lasers 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 4, 页码: 041102
Authors:  Cao, YL;  Ji, HM;  Yang, T;  Zhang, YH;  Ma, WQ;  Wang, QJ
Adobe PDF(754Kb)  |  Favorite  |  View/Download:500/100  |  Submit date:2015/03/20
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 396, 页码: 33-37
Authors:  Du, WN;  Yang, XG;  Wang, XY;  Pan, HY;  Ji, HM;  Luo, S;  Yang, T;  Wang, ZG
Adobe PDF(1747Kb)  |  Favorite  |  View/Download:274/33  |  Submit date:2015/04/02
Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 55-60
Authors:  Wang, XY;  Yang, XG;  Du, WN;  Ji, HM;  Luo, S;  Yang, T
Adobe PDF(2425Kb)  |  Favorite  |  View/Download:246/33  |  Submit date:2015/03/25
Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 8, 页码: 081118
Authors:  Gu YX (Gu, Yong-Xian);  Yang XG (Yang, Xiao-Guang);  Ji HM (Ji, Hai-Ming);  Xu PF (Xu, Peng-Fei);  Yang T (Yang, Tao)
Adobe PDF(655Kb)  |  Favorite  |  View/Download:873/281  |  Submit date:2013/04/02
High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文
OPTICS LETTERS, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073
Authors:  Cao YL (Cao, Yulian);  Ji HM (Ji, Haiming);  Xu PF (Xu, Pengfei);  Gu YX (Gu, Yongxian);  Ma WQ (Ma, Wenquan);  Yang T (Yang, Tao)
Adobe PDF(206Kb)  |  Favorite  |  View/Download:650/198  |  Submit date:2013/03/27
Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers 期刊论文
OPTICS LETTERS, 2012, 卷号: 37, 期号: 8, 页码: 1298-1300
Authors:  Xu, PF;  Ji, HM;  Xiao, JL;  Gu, YX;  Huang, YZ;  Yang, T
Adobe PDF(303Kb)  |  Favorite  |  View/Download:683/238  |  Submit date:2013/03/17
Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 7, 页码: 77301
Authors:  Wang M;  Gu YX;  Ji HM;  Yang T;  Wang ZG;  Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn
Adobe PDF(1222Kb)  |  Favorite  |  View/Download:700/141  |  Submit date:2012/02/06
Epitaxy  Movpe  
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: Article no.75010
Authors:  Yang XG;  Yang T;  Wang KF;  Ji HM;  Ni HQ;  Niu ZC;  Wang ZG;  Yang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. tyang@semi.ac.cn
Adobe PDF(1135Kb)  |  Favorite  |  View/Download:1252/386  |  Submit date:2011/07/05
High-density  Temperature-dependence  Self-formation  Layers  Well  Mbe  
The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 卷号: 11, 期号: 11 S1, 页码: 9345-9356
Authors:  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Xu B (Xu Bo);  Ma WQ (Ma Wen-Quan);  Wang ZG (Wang Zhanguo)
Adobe PDF(3475Kb)  |  Favorite  |  View/Download:1041/136  |  Submit date:2012/02/22
Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 3, 页码: Article no.38401
Authors:  Yang XG;  Yang T;  Wang KF;  Gu YX;  Ji HM;  Xu PF;  Ni HQ;  Niu ZC;  Wang XD;  Chen YL;  Wang ZG;  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
Adobe PDF(541Kb)  |  Favorite  |  View/Download:1083/352  |  Submit date:2011/07/05