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Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers 期刊论文
Nanoscale, 2017, 卷号: 9, 页码: 19124
Authors:  Lili Zhang;  Chenyu Wang;  Xue-Lu Liu;  Tao Xu;  Mingsheng Long;  Erfu Liu;  Chen Pan;  Guangxu Su;  Junwen Zeng;  Yajun Fu;  Yiping Wang;  Zhendong Yan;  Anyuan Gao;  Kang Xu;  Ping-Heng Tan;  Litao Sun;  Zhenlin Wang;  Xinyi Cui;  Feng Miao
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Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 1, 页码: Art.No.013104
Authors:  Gong Z;  Niu ZC;  Fang ZD;  Miao ZH;  Feng SL;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Molecular-beam Epitaxy  
Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 mu m 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 274, 期号: 1-2, 页码: 78-84
Authors:  Gong Z;  Fang ZD;  Miao ZH;  Niu ZC;  Feng SL;  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912,Qinghua E Rd,Haidian Dist, Beijing 100083, Peoples R China. 电子邮箱地址: Zhgong@red.semi.ac.cn
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1.5 Mu m Light  
Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers 期刊论文
SOLID STATE COMMUNICATIONS, 2004, 卷号: 132, 期号: 6, 页码: 421-424
Authors:  Gong Z;  Fang ZD;  Xu XH;  Miao ZH;  Niu ZC;  Feng SL;  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhgong@red.semi.ac.cn
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Quantum Dot  
The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 卷号: 16, 期号: 1, 页码: 29-35
Authors:  Gong Z;  Fang ZD;  Xu XH;  Miao ZH;  Ni HQ;  Niu ZC;  Feng SL;  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhgong@red.semi.ac.cn
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Molecular-beam Epitaxy  
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
Authors:  Lan Q;  Niu ZC;  Zhou DY;  Kong YC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Natl Lab Superlattices Inst Semicond Beijing 100083 Peoples R China.
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Self-organized InAs quantum wires on GaAs (331)A substrates 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 10, 页码: 1819-1821
Authors:  Gong Z;  Fang ZD;  Miao ZH;  Niu ZC;  Feng SL;  Gong Z,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Dots  Photoluminescence  
Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 卷号: 15, 期号: 31, 页码: 5383-5388
Authors:  Gong Z;  Fang ZD;  Xu XH;  Miao ZH;  Niu ZC;  Feng SL;  Gong Z,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattice & Micorstruct,POB 912,Beijing 100083,Peoples R China.
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1.35 Mu-m  Islands  Photoluminescence  
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 卷号: 17, 期号: 1-4, 页码: 114-116
Authors:  Lan Q;  Niu ZC;  Zhou DY;  Kong YC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC,Chinese Acad Sci,Natl Lab Superlattices,Inst Semicond,Beijing 100083,Peoples R China.
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Quantum Dots  Molecular Beam Epitaxy  Photoluminescence  
A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS, 2003, 卷号: 12, 期号: 1, 页码: 97-99
Authors:  Kong YC;  Zhou DY;  Lan Q;  Liu JL;  Miao ZH;  Feng SL;  Niu ZC;  Kong YC,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Micostruct,Beijing 100083,Peoples R China.
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Quantum Dots  Electroluminescence  State Filling Effect  Optical-properties  Wavelength  Emission  Laser  Gaas  Dependence  Layer