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Si基InAsSb纳米线MOCVD生长及机理研究 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  杜文娜
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Inassb纳米线  生长机制  平面纳米线  纳米线阵列  金属有机化学气相沉积  
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 396, 页码: 33-37
Authors:  Du, WN;  Yang, XG;  Wang, XY;  Pan, HY;  Ji, HM;  Luo, S;  Yang, T;  Wang, ZG
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Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 55-60
Authors:  Wang, XY;  Yang, XG;  Du, WN;  Ji, HM;  Luo, S;  Yang, T
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硅基高晶体质量InAsSb平面纳米线的生长方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  杨涛;  杜文娜;  杨晓光;  王小耶;  季祥海;  王占国
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直接在Si衬底上自催化生长InAsSb纳米线的方法 专利
专利类型: 发明, 公开日期: 2014-07-23
Inventors:  杜文娜;  杨晓光;  王小耶;  杨涛;  王占国
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