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Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors 期刊论文
Journal of Crystal Growth, 2015, 卷号: 425, 页码: 381-384
Authors:  Chengyan Wang;  Yang Zhang;  Min Guan;  Lijie Cui;  Kai Ding;  Bintian Zhang;  Zhang Lin;  Feng Huang;  Yiping Zeng
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Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 407, 页码: 37-41
Authors:  Huang, Jianliang;  Ma, Wenquan;  Wei, Yang;  Zhang, Yanhua;  Cui, Kai;  Shao, Jun
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Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
Semiconductor Science and Technology, 2013, 卷号: 28, 期号: 4, 页码: 045004
Authors:  Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li
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量子点存储器材料与器件研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  崔凯
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Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 卷号: 28, 期号: 4, 页码: 045004
Authors:  Guo, Xiaolu;  Ma, Wenquan;  Huang, Jianliang;  Zhang, Yanhua;  Wei, Yang;  Cui, Kai;  Cao, Yulian;  Li, Qiong
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540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 6, 页码: 759-761
Authors:  Cui, Kai;  Ma, Wenquan;  Zhang, Yanhua;  Huang, Jianliang;  Wei, Yang;  Cao, Yulian;  Guo, Xiaolu;  Li, Qiong
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Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 卷号: 45, 页码: 173-176
Authors:  Cui K (Cui, Kai);  Ma WQ (Ma, Wenquan);  Huang JL (Huang, Jianliang);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cao YL (Cao, Yulian);  Gu YX (Gu, Yongxian);  Yang T (Yang, Tao)
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Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文
Zhang, Yanhua1 ; Ma, Wenquan1 ; Wei, Yang1 ; Cao, Yulian1 ; Huang, Jianliang1 ; Cui, Kai1 ; Guo, Xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511
Authors:  Zhang, Yanhua;  Ma, Wenquan;  Wei, Yang;  Cao, Yulian;  Huang, Jianliang;  Cui, Kai;  Guo, Xiaolu
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High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control 期刊论文
IEEE Journal of Quantum Electronics, 2012, 卷号: 48, 期号: 4, 页码: 512-515
Authors:  Wei, Yang;  Ma, Wenquan;  Zhang, Yanhua;  Huang, Jianliang;  Cao, Yulian;  Cui, Kai
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How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 卷号: 48, 期号: 10, 页码: 1322-1326
Authors:  Huang JL (Huang, Jianliang);  Ma WQ (Ma, Wenquan);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cui K (Cui, Kai);  Cao YL (Cao, Yulian);  Guo XL (Guo, Xiaolu);  Shao J (Shao, Jun)
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