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Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 12, 页码: Art. No. 123705
Authors:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen J Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address: ewjfan@ntu.edu.sg
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Emission  Spectra  Lasers  8-band  
Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 46, 期号: 3, 页码: 498-506
Authors:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Fan WJ Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address: ewjfan@ntu.edu.sg
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Band Structure  K.p Method  Quantum Dots  Diluted Nitride  Optical Gain  
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
JOURNAL OF APPLIED PHYSICS
Authors:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen, J, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
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Emission