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Three-region characteristic temperature in p-doped quantum dot lasers 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 4, 页码: 041102
Authors:  Cao, YL;  Ji, HM;  Yang, T;  Zhang, YH;  Ma, WQ;  Wang, QJ
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Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 28, 页码: 3696-3700
Authors:  Li, Q;  Ma, WQ;  Zhang, YH;  Cui, K;  Huang, JL;  Wei, Y;  Liu, K;  Cao, YL;  Wang, WY;  Liu, YL;  Jin, P
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Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 51, 期号: 7,Part 1, 页码: 74002
Authors:  Huang, JL;  Ma, WQ;  Cao, YL;  Wei, Y;  Zhang, YH;  Cui, K;  Deng, GR;  Shi, YL
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Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 17, 页码: 173511
Authors:  Zhang, YH;  Ma, WQ;  Wei, Y;  Cao, YL;  Huang, JL;  Cui, K;  Guo, XL
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Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文
Authors:  Cui K (Cui, Kai);  Ma WQ (Ma, Wenquan);  Huang JL (Huang, Jianliang);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cao YL (Cao, Yulian);  Gu YX (Gu, Yongxian);  Yang T (Yang, Tao)
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How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 卷号: 48, 期号: 10, 页码: 1322-1326
Authors:  Huang JL (Huang, Jianliang);  Ma WQ (Ma, Wenquan);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cui K (Cui, Kai);  Cao YL (Cao, Yulian);  Guo XL (Guo, Xiaolu);  Shao J (Shao, Jun)
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High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文
OPTICS LETTERS, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073
Authors:  Cao YL (Cao, Yulian);  Ji HM (Ji, Haiming);  Xu PF (Xu, Pengfei);  Gu YX (Gu, Yongxian);  Ma WQ (Ma, Wenquan);  Yang T (Yang, Tao)
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Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-Like and Mixed Interfaces 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 卷号: 47, 期号: 12, 页码: 1475-1479
Authors:  Zhang, YH;  Ma, WQ;  Cao, YL;  Huang, JL;  Wei, Y;  Cui, K;  Shao, J;  Ma, WQ (reprint author), Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China,
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Inas/gasb  Interfaces  Long Wavelength Infrared Photodetector  Type Ii Superlattice  Detectors  Growth  
Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 2, 页码: 23502
Authors:  Cui K;  Ma WQ;  Zhang YH;  Huang JL;  Wei Y;  Cao YL;  Jin Z;  Bian LF;  Ma, WQ (reprint author), Chinese Acad Sci, Lab Nanooptoelect, Inst Semicond, Qinghua E Rd A 35,POB 912, Beijing 100083, Peoples R China,
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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.44201
Authors:  Xu PF;  Yang T;  Ji HM;  Cao YL;  Gu YX;  Wang ZG;  Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Well Lasers  Dependence  Diode  Gain