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Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases 期刊论文
Journal of Applied Physics, 2016, 卷号: 120, 期号: 12, 页码: 124501
Authors:  Junda Yan;  Quan Wang;  Xiaoliang Wang;  Chun Feng;  Hongling Xiao;  Shiming Liu;  Jiamin Gong;  Fengqi Liu;  Baiquan Li
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Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文
Semiconductor Science and Technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Authors:  Wei Li;  Quan Wang;  Xiangmi Zhan;  Junda Yan;  Lijuan Jiang;  Haibo Yin;  Jiamin Gong;  Xiaoliang Wang;  Fengqi Liu;  Baiquan Li;  Zhanguo Wang
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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
Phys. Status Solidi A, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
Authors:  He Kang;  Quan Wang;  Hongling Xiao;  Cuimei Wang;  Lijuan Jiang;  Chun Feng;  Hong Chen;  Haibo Yin;  Shenqi Qu;  Enchao Peng;  Jiamin Gong;  Xiaoliang Wang;  Baiquan Li;  Zhanguo Wang;  Xun Hou
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A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文
CHIN. PHYS. LETT., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Authors:  Lei Cui;  Quan Wang;  XiaoLiang Wang;  HongLing Xiao;  CuiMei Wang;  LiJuan Jiang;  Chun Feng;  HaiBo Yin;  JiaMin Gong;  BaiQuan Li;  ZhanGuo Wang
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氮化铟沟道层氮化镓基高电子迁移率晶体管结构 专利
专利类型: 发明, 公开日期: 2016-09-28
Inventors:  王晓亮;  李巍;  李百泉;  肖红领;  殷海波;  冯春;  姜丽娟;  邱爱芹;  王翠梅;  介芳
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一种InxAl1-xN/AlN复合势垒层氮化镓基异质结高电子迁移率晶体管结构 专利
专利类型: 发明, 公开日期: 2016-09-28
Inventors:  王晓亮;  李巍;  肖红领;  冯春;  姜丽娟;  殷海波;  王翠梅;  李百泉
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氮化铟沟道层氮化镓基高电子迁移率晶体管结构 专利
专利类型: 发明, 公开日期: 2016-09-28
Inventors:  王晓亮;  李巍;  李百泉;  肖红领;  殷海波;  冯春;  姜丽娟;  邱爱芹;  王翠梅;  介芳
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一种InxAl1-xN/AlN复合势垒层氮化镓基异质结高电子迁移率晶体管结构 专利
专利类型: 发明, 公开日期: 2016-09-29
Inventors:  王晓亮;  李巍;  肖红领;  冯春;  姜丽娟;  殷海波;  王翠梅;  李百泉
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一种氮化镓基绝缘栅双极晶体管制备方法及其产品 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  王晓亮;  闫俊达;  李百泉;  王权;  肖红领;  冯春;  殷海波;  姜丽娟;  邱爱芹;  介芳
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