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High-power, high-spectral-purity GaSb-based laterally coupled distributed feedback lasers with metal gratings emitting at 2 l m 期刊论文
Applied Physics Letters, 2019, 卷号: 114, 页码: 021102
Authors:  Cheng-Ao Yang;   Sheng-Wen Xie;   Yi Zhang;   Jin-Ming Shang;   Shu-Shan Huang;   Ye Yuan;   Fu-Hui Shao;   Yu Zhang;   Ying-Qiang Xu;   Zhi-Chuan Niu
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High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3, 页码: 038504
Authors:  Zhi Jiang ;   Yao-Yao Sun ;   Chun-Yan Guo ;   Yue-Xi Lv ;   Hong-Yue Hao ;   Dong-Wei Jiang ;   Guo-Wei Wang ;   Ying-Qiang Xu ;   Zhi-Chuan Niu
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High-Power Laterally Coupled Distributed Feedback Lasers With Metal Gratings Around 2 μm 期刊论文
IEEE Photonics Technology Letters, 2019, 卷号: 31, 期号: 3, 页码: 210-213
Authors:  Cheng-Ao Yang ;   Sheng-Wen Xie;   Shu-Shan Huang;   Ye Yuan;   Yi Zhang;   Jin-Ming Shang;   Yu Zhang;   Ying-Qiang Xu;   Zhi-Chuan Niu
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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 11, 页码: 4982-4988
Authors:  Yuxiong Long;   Jun Z. Huang;   Qianqian Huang;   Member,IEEE ;   Nuo Xu ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Zhi-Chuan Niu ;   David Esseni ;   Fellow,IEEE ;   Ru Huang;   Fellow,IEEE ;   Shu-Shen Li
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High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028503
Authors:  Fa-Ran Chang ;   Rui-Ting Hao ;   Tong-Tong Qi ;   Qi-Chen Zhao ;   Xin-Xing Liu ;   Yong Li ;   Kang Gu ;   Jie Guo ;   Guo-Wei Wang ;   Ying-Qiang Xu ;   Zhi-Chuan Niu
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High quality 2-µm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 3, 页码: 034202
Authors:  Jin-Ming Shang ;   Jian Feng ;   Cheng-Ao Yang ;   Sheng-Wen Xie ;   Yi Zhang ;   Cun-Zhu Tong ;   Yu Zhang ;   Zhi-Chuan Niu
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Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 11, 页码: 118102
Authors:  Jing Zhang;  Hong-Liang Lv;  Hai-Qiao Ni;  Shi-Zheng Yang;  Xiao-Ran Cui;  Zhi-Chuan Niu;  Yi-Men Zhang and Yu-Ming Zhang
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High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 014208
Authors:  Sheng-Wen Xie ;   Yu Zhang ;   Cheng-Ao Yang ;   Shu-Shan Huang ;   Ye Yuan ;   Yi Zhang ;   Jin-Ming Shang ;   Fu-Hui Shao ;   Ying-Qiang Xu ;   Hai-Qiao Ni ;   Zhi-Chuan Niu
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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 11, 页码: 4982-4988
Authors:  Yuxiong Long;   Jun Z. Huang;   Qianqian Huang;   Member,IEEE ;   Nuo Xu ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Zhi-Chuan Niu ;   David Esseni ;   Fellow,IEEE ;   Ru Huang;   Fellow,IEEE ;   Shu-Shen Li
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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-µm quantum dot lasers 期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 7, 页码: 078104
Authors:  Hui-Ming Hao;  Xiang-Bin Su;  Jing Zhang;  Hai-Qiao Ni;  Zhi-Chuan Niu
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