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Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors 期刊论文
NANO LETTERS, 2018, 卷号: 18, 期号: 10, 页码: 6611-6616
Authors:  Fangyuan Yang;   Zuocheng Zhang;   Nai Zhou Wang;   Guo Jun Ye;   Wenkai Lou;   Xiaoying Zhou;   Kenji Watanabe;   Takashi Taniguchi;   Kai Chang;   Xian Hui Chen;   Yuanbo Zhang
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Quantum Hall effect in black phosphorus two-dimensional electron system 期刊论文
NATURE NANOTECHNOLOGY, 2016, 卷号: 11, 期号: 7, 页码: 593-597
Authors:  Likai Li;  Fangyuan Yang;  Guo Jun Ye;  Zuocheng Zhang;  Zengwei Zhu;  Wenkai Lou;  Xiaoying Zhou;  Liang Li;  Kenji Watanabe;  Takashi Taniguchi;  Kai Chang;  YayuWang;  Xian Hui Chen;  Yuanbo Zhang
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Quantum Hall effect in black phosphorus two-dimensional electron system 期刊论文
NATURE NANOTECHNOLOGY, 2016, 卷号: 11, 期号: 7, 页码: 593-597
Authors:  Likai Li;  Fangyuan Yang;  Guo Jun Ye;  Zuocheng Zhang;  Zengwei Zhu;  Wenkai Lou;  Xiaoying Zhou;  Liang Li;  Kenji Watanabe;  Takashi Taniguchi;  Kai Chang;  YayuWang;  Xian Hui Chen* and Yuanbo Zhang
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Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 17, 页码: Art. No. 171101
Authors:  Cao YL (Cao Yu-Lian);  Yang T (Yang Tao);  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Gu YX (Gu Yong-Xian);  Wang XD (Wang Xiao-Dong);  Wang Q (Wang Qing);  Ma WQ (Ma Wen-Quan);  Chen LH (Chen Liang-Hui);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tyang@semi.ac.cn
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Excited States  Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Laser Tuning  Optical Films  Quantum Dot Lasers  Silicon Compounds  Tantalum Compounds  Temperature-dependence  Threshold  Performance  Gain  
Photoluminescence degradation in GaN induced by light enhanced surface oxidation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 102, 期号: 7, 页码: Art.No.076112
Authors:  Liu WB (Liu Wenbao);  Sun X (Sun Xian);  Zhang S (Zhang Shuang);  Chen J (Chen Jun);  Wang H (Wang Hui);  Wang XL (Wang Xiaolan);  Zhao DG (Zhao Degang);  Yang H (Yang Hui);  Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wbliu@semi.ac.cn
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Gaas-surfaces  
外延晶体硅薄膜太阳电池的量子效率和特性研究 期刊论文
中国科学. E辑, 技术科学, 2004, 卷号: 34, 期号: 0, 页码: 11
Authors:  艾斌;  沈辉;  班群;  梁宗存;  陈如龙;  施正荣;  廖显伯
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