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Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 068504
Authors:  Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng
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Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101
Authors:  Zhan-Wei Shen;  Feng Zhang;  Sima Dimitrijev;  Ji-Sheng Han;  Guo-Guo Yan;  Zheng-Xin Wen;  Wan-Shun Zhao;  Lei Wang;  Xing-Fang Liu;  Guo-Sheng Sun;  Yi-Ping Zeng
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Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 12, 页码: 128104
Authors:  Li-Xin Tian;  Feng Zhang;  Zhan-Wei Shen;  Guo-Guo Yan;  Xing-Fang Liu;  Wan-Shun Zhao;  Lei Wang;  Guo-Sheng Sun;  Yi-Ping Zeng
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Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si(100) substrates 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 8, 页码: 086802
Authors:  Liu Xing-Fang, Sun Guo-Sheng, Liu Bin, Yan Guo-Guo, Guan Min, Zhang Yang, Zhang Feng, Dong Lin, Zheng Liu, Liu Sheng-Bei, Tian Li-Xin, Wang Lei, Zhao Wan-Shun, Zeng Yi-Ping
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Fast Homoepitaxial Growth of 4H-SiC Films on 4∘ off-Axis Substrates in a SiH4-C2H4-H2 Systemb InAs quantum well structures 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 12, 页码: 8101
Authors:  LIU Bin, SUN Guo-Sheng, LIU Xing-Fang, ZHANG Feng, DONG Lin, ZHENG Liu, YAN Guo-Guo, LIU Sheng-Bei, ZHAO Wan-Shun, WANG Lei, ZENG Yi-Ping, LI Xi-Guang, WANG Zhan-Guo, YANG Fei
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10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor 期刊论文
Materials Science Forum, 2013, 卷号: 740-742, 页码: 239-242
Authors:  Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang
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Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 9, 页码: 096105
Authors:  DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei
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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 9, 页码: 7302
Authors:  Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua
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4H-SiC同质外延层中的扩展缺陷研究 期刊论文
半导体光电, 2011, 卷号: 32, 期号: 3, 页码: 359-362
Authors:  闫果果;  孙国胜;  吴海雷;  王雷;  赵万顺;  刘兴昉;  董林;  郑柳;  曾一平
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电学测试的汞探针装置 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-10, 2010-08-12
Inventors:  纪 刚;  孙国胜;  宁 瑾;  刘兴昉;  赵永梅;  王 雷;  赵万顺;  曾一平;  李晋闽
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