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一种在硅衬底上生长无裂纹Ⅲ族氮化物的方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  吴洁君;  韩修训;  李杰民;  黎大兵;  陆沅;  王晓晖
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Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
OPTICAL MATERIALS, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Authors:  Wu JJ (Wu Jiejun);  Han XX (Han Xiuxun);  Li JM (Li Jiemin);  Wei HY (Wei Hongyuan);  Cong GW (Cong Guangwei);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Hu TD (Hu Tiandou);  Wang HH (Wang Huanhua);  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiejunw@red.semi.ac.cn
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In dopIng  Cracks  Si(111) Substrate  Lt-algan Interlayer  Metalorganic Chemical Vapor Deposition  Gan  Phase Epitaxy  Indium-surfactant  Optical-properties  Si(111)  Stress  Films  
Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.602110
Authors:  Cong GW;  Peng WQ;  Wei HY;  Han XX;  Wu JJ;  Liu XL;  Zhu QS;  Wang ZG;  Lu JG;  Ye ZZ;  Zhu LP;  Qian HJ;  Su R;  Hong CH;  Zhong J;  Ibrahim K;  Hu TD;  Cong, GW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: gwcong@semi.ac.cn
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P-type Conduction  Thin-films  Ohmic Contacts  
Aluminium doping induced enhancement of p-d coupling in ZnO 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087
Authors:  Cong GW;  Peng WQ;  Wei HY;  Liu XL;  Wu JJ;  Han XX;  Zhu QS;  Wang ZG;  Ye ZZ;  Lu JG;  Zhu LP;  Qian HJ;  Su R;  Hong CH;  Zhong J;  Ibrahim K;  Hu TD;  Cong, GW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: gwcong@semi.ac.cn
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Electronic-structure Calculations  Ii-vi Semiconductors  Thin-films  Photoelectron-spectroscopy  Doped Zno  1st-principles  Conduction  States  
自适应柔性层制备无裂纹硅基Ⅲ族氮化物薄膜的方法 专利
专利类型: 发明, 申请日期: 2005-12-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  吴洁君;  黎大兵;  陆沅;  韩修训;  李杰民;  王晓辉;  刘祥林;  王占国
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Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
Authors:  Wu JJ;  Han XX;  Li JM;  Li DB;  Lu Y;  Wei HY;  Cong GW;  Liu XL;  Zhu QS;  Wang ZG;  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Cracks  
Ⅲ族氮化物低维结构的生长及物性研究 学位论文
, 北京: 中国科学院半导体研究所, 2005
Authors:  韩修训
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A model for scattering due to interface roughness in finite quantum wells 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212
Authors:  Li JM;  Wu JJ;  Han XX;  Lu YW;  Lin XL;  Zhu QS;  Wang ZG;  Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: jiemli@red.semi.ac.cn
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Single-particle  Electron-gas  Mobility  Gaas  Disorder  
缓冲层厚度对MOCVD法生长GaN外延薄膜性能的影响 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 3, 页码: 466-470
Authors:  吴洁君;  韩修训;  李杰民;  黎大兵;  魏宏远;  康亭亭;  王晓晖;  刘祥林;  王占国
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Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 266, 期号: 4, 页码: 423-428
Authors:  Han XX;  Chen Z;  Li DB;  Wu JJ;  Li JM;  Sun XH;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Nanostructure