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320 _ 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice 期刊论文
Infrared Physics & Technology, 2017, 卷号: 82, 页码: 140–143
Authors:  Sun Yaoyao;  Han Xi;  Hao Hongyue;  Jiang Dongwei;  Guo Chunyan;  Jiang Zhi;  Lv Yuexi;  Wang Guowei;  Xu Yingqiang;  Niu Zhichuan ⇑
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Novel Sb-based type-II superlattices infrared detectors 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2012, 卷号: 41, 期号: 12, 页码: 3141-3144
Authors:  Shi, Yanli;  He, Wenjin;  Zhang, Weifeng;  Wang, Yu;  Yuan, Jun;  Mo, Jinghui;  Feng, Jiangmin;  Hu, Rui;  Deng, Gongrong;  Xu, Yingqiang;  Niu, Zhichuan
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High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 4, 页码: 044006
Authors:  Zhang, Yu;  Wang, Yongbin;  Xu, Yingqiang;  Xu, Yun;  Niu, Zhichuan;  Song, Guofeng
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2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan;  Xu, Y.(yingqxu@semi.ac.cn)
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Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction  
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
Authors:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying;  Ni, Haiqiao;  Xu, Yingqiang;  Niu, Zhichuan;  He, J.(hejifang@semi.ac.cn)
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Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells  
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Authors:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun;  Song, Guofeng;  Xu, Y.(xuyun@semi.ac.cn)
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Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds  
2~5μm InAs/GaSb超晶格红外探测器 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  徐应强;  汤宝;  王国伟;  任正伟;  牛智川
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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
THIN SOLID FILMS, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Authors:  Hao RT (Hao Ruiting);  Deng SK (Deng Shukang);  Shen LX (Shen Lanxian);  Yang PZ (Yang Peizhi);  Tu JL (Tu Jielei);  Liao H (Liao Hua);  Xu YQ (Xu Yingqiang);  Niu ZC (Niu Zhichuan);  Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn
Adobe PDF(791Kb)  |  Favorite  |  View/Download:1348/514  |  Submit date:2010/12/28
Gallium Arsenide  Gallium Antimonide  Gallium Antimonide/aluminum Antimonide  Superlattices  Molecular Beam Epitaxy  Vapor-phase Epitaxy  Surface-morphology  Growth  Superlattices  Temperature  Relaxation  Detectors  Gaas(001)  Mocvd  Films  
MBE方法在GaAs(001)衬底上外延生长GaSb膜 期刊论文
功能材料, 2010, 卷号: 41, 期号: 4, 页码: 734-736
Authors:  郝瑞亭;  申兰先;  邓书康;  杨培志;  涂洁磊;  廖华;  徐应强;  牛智川
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GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-11-11, 公开日期: 4012
Inventors:  汤宝;  周志强;  郝瑞亭;  任正伟;  徐应强;  牛智川
Adobe PDF(573Kb)  |  Favorite  |  View/Download:1089/286  |  Submit date:2010/03/19