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掺Te的GaSb薄膜分子束外延生长及缺陷特性 期刊论文
红外与毫米波学报, 2012, 卷号: 31, 期号: 4, 页码: 298-301
Authors:  陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川
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Defect of Te-doped GaSb layers grown by molecular beam epitaxy 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2012, 卷号: 31, 期号: 4, 页码: 298-301
Authors:  Chen Y (Chen Yan);  Deng AH (Deng Ai-Hong);  Tang B (Tang Bao);  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Niu ZC (Niu Zhi-Chuan)
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2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan;  Xu, Y.(
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Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction  
锑化物异质结半导体材料生长与光电性质研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  汤宝
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Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Authors:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun;  Song, Guofeng;  Xu, Y.(
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Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds  
2~5μm InAs/GaSb超晶格红外探测器 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  徐应强;  汤宝;  王国伟;  任正伟;  牛智川
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Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 7, 页码: Art. No. 077305
Authors:  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Guo J (Guo Jie);  Tang B (Tang Bao);  Ren ZW (Ren Zheng-Wei);  He ZH (He Zhen-Hong);  Niu ZC (Niu Zhi-Chuan);  Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址:
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Ir Detection Modules  Inas  
GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-11-11, 公开日期: 4012
Inventors:  汤宝;  周志强;  郝瑞亭;  任正伟;  徐应强;  牛智川
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GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-10-21, 公开日期: 4010
Inventors:  周志强;  郝瑞亭;  汤 宝;  任正伟;  徐应强;  牛智川
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GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 2, 页码: Art. No. 028102
Authors:  Tang B;  Xu YQ;  Zhou ZQ;  Hao RT;  Wang GW;  Ren ZW;  Niu ZC;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address:
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Inas/ga1-xinxsb Superlattice  Gasb  Heterojunctions  Photodiodes  Segregation  Layers  Inas  Alsb