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Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 40529
Authors:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail:
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Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iii-v Materials  Mu-m  Lasers  Temperature  Surfactant  Nm  
Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 6, 页码: 2950-2954
Authors:  Xu XH;  Niu ZC;  Ni HQ;  Xu YQ;  Zhang W;  He ZH;  Han Q;  Wu RH;  Jiang DS;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:
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Molecular Beam Epitaxy