SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-5 of 5 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
Hole mediated magnetism in Mn-doped GaN nanowires 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.74313
Authors:  Zhang XW;  Li JB;  Chang K;  Li SS;  Xia JB;  Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn
Adobe PDF(253Kb)  |  Favorite  |  View/Download:1558/404  |  Submit date:2011/07/05
Molecular-beam Epitaxy  Room-temperature  Quantum Wires  Semiconductors  Ferromagnetism  Field  Gamnn  
Magnetic and electronic structure properties of Co-doped SnO2 nanoparticles synthesized by the sol-gel-hydrothermal technique 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83930
Authors:  Chen WB;  Li JB;  Chen, WB, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn
Adobe PDF(1050Kb)  |  Favorite  |  View/Download:1365/627  |  Submit date:2011/07/05
Room-temperature Ferromagnetism  Semiconductors  Energy  
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
PHYSICS LETTERS A, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
Authors:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn
Adobe PDF(249Kb)  |  Favorite  |  View/Download:1497/625  |  Submit date:2011/07/05
First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys  
First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions 期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2010, 卷号: 50, 期号: 2, 页码: 344-348
Authors:  Wang ZG;  Zhang CL;  Li JB;  Gao F;  Weber WJ;  Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn
Adobe PDF(976Kb)  |  Favorite  |  View/Download:1070/335  |  Submit date:2011/07/05
Gan Nanowires  Electronic Properties  First Principles  Gan Nanowires  Ab-initio  Emission Properties  Semiconductors  Arrays  
The bipolar doping of ZnS via native defects and external dopants 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 11, 页码: Art. No. 113704
Authors:  Gai YQ;  Li JB;  Yao B;  Xia JB;  Gai YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: jbli@semi.ac.cn
Adobe PDF(180Kb)  |  Favorite  |  View/Download:1519/512  |  Submit date:2010/03/08
Augmented-wave Method  P-type Zno  Point-defects  Ii-vi  Nitrogen  Semiconductors  1st-principles  Compensation  Enhancement