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Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 卷号: 153, 期号: 7, 页码: G703-G706
Authors:  Sun J;  Jin P;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
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Gaas  Spectroscopy  Parameters  Transport  Lasers  Energy  States  Hole  
Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 卷号: 9, 期号: 5, 页码: G167-G170
Authors:  Sun J;  Li RY;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail: albertjefferson@sohu.com
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Semiconductor-devices  Transport  States  Bistability  Voltage  Lasers  Diode  
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 3, 页码: 304-308
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Li DB;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Low Dimensional Structures  Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diodes  Temperature-dependence  Threshold Current  Mu-m  Lasers  
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  Ye XL;  Zhao FA;  Meng XQ;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Photoluminescence  Molecular Beam Epitaxy  Nanomaterials  Quantum Dots  Semiconducting Iii-v Materials  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Growth  Lasers  Inp  
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  1.3 Mu-m  Temperature-dependence  Growth  Gaas  Lasers  
Structure and photoluminescence of InGaAs quantum dots formed on an InAlAs wetting layer 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 10, 页码: 1411-1414
Authors:  Zhang YC;  Huang CJ;  Ye XL;  Xu B;  Ding D;  Wang JZ;  Li YF;  Liu FQ;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Temperature-dependence  Carrier Transfer  Lasers  Gain  
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:  Zhang YC;  Huang CJ;  Xu B;  Ye XL;  Ding D;  Wang JZ;  Li YF;  Liu F;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Electron-phonon Interactions  Temperature-dependence  Semiconductor Nanocrystals  Carrier Transfer  Inas  Gaas  Lasers  Islands  Growth  Gain  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:  Sun S;  Wu J;  Liu FQ;  Zu HZ;  Chen YH;  Ye XL;  Jiang WH;  Xu B;  Wang ZG;  Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Inas Islands  Inp(001)  Growth  Gaas  Semiconductors  Thickness  Lasers  Ingaas  Size  
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
Authors:  Li YF;  Liu FQ;  Xu B;  Ye XL;  Ding D;  Sun ZZ;  Jiang WH;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Strained Islands  Gaas  Organization  Inp(001)  Lasers  Ingaas  Layer