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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Wang YT;  Jia QJ;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  X-ray Diffraction  Time-resolved Photoluminescence  Light-emitting-diodes  Piezoelectric Fields  Laser-diodes  Dependence  Recombination  Polarization  Dynamics  Growth  Mocvd  
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:  Sun X;  Jiang DS;  Liu WB;  Zhu JH;  Wang H;  Liu ZS;  Zhu JJ;  Wang YT;  Zhao DG;  Zhang SM;  You LP;  Ma RM;  Yang H;  Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn;  dsjiang@red.semi.ac.cn
Adobe PDF(280Kb)  |  Favorite  |  View/Download:1225/371  |  Submit date:2010/03/08
Light-emitting-diodes  Fundamental-band Gap  Nanowires  Heterostructures  Nanostructures  Mocvd  Polar  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
Authors:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)  |  Favorite  |  View/Download:948/260  |  Submit date:2010/11/15
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 卷号: 42, 期号: 0, 页码: S753-S756
Authors:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP,Chinese Acad Sci,State Key Lab Integrated Optoelect,Inst Semicond,Beijing 100083,Peoples R China.
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Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction  
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:  Feng G;  Zheng XH;  Fu Y;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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X-ray Diffraction  Etching  Metalorganic Vapor-phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Light-emitting-diodes  Vapor-phase Epitaxy  Films  Dislocations  Density  Growth  Layers  
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2002, 卷号: 45, 期号: 3, 页码: 255-260
Authors:  Sun YP;  Fu Y;  Qu B;  Wang YT;  Feng ZH;  Shen XM;  Zhao DG;  Zheng XH;  Duan LH;  Li BC;  Zhang SM;  Yang H;  Sun YP,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China. 电子邮箱地址: ypsun@red.semi.ac.cn
Adobe PDF(721Kb)  |  Favorite  |  View/Download:1461/382  |  Submit date:2010/08/12
Wafer Bonding  Cubic  Gan/gaas(001)  Si-substrate  Light-emitting-diodes  P-type Gan  Resistance  Contact  Laser  
Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching 期刊论文
THIN SOLID FILMS, 2000, 卷号: 372, 期号: 1-2, 页码: 25-29
Authors:  Xu D;  Yang H;  Zhang SM;  Zheng LX;  Zhao DG;  Li SF;  Wang YT;  Wu RH;  Xu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(193Kb)  |  Favorite  |  View/Download:875/312  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Light-emitting-diodes  Yellow Luminescence  Growth  Heterostructure  Nitride