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Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93507
Authors:  Shen C;  Wang LG;  Zheng HZ;  Zhu H;  Chen L;  Zhao JH;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn
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Gallium-arsenide  Semiconductors  Field  
Electron spin dynamics in heavily Mn-doped (Ga,Mn)As 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 26, 页码: Article no.262109
Authors:  Zhu YG;  Han LF;  Chen L;  Zhang XH;  Zhao JH;  Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xinhuiz@semi.ac.cn
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Semiconductors  Temperature  Gaas  
Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 24, 页码: Article no.242505
Authors:  Wang SL;  Chen L;  Meng KK;  Xu PF;  Meng HJ;  Lu J;  Yan WS;  Zhao JH;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn
Adobe PDF(641Kb)  |  Favorite  |  View/Download:1079/268  |  Submit date:2011/07/05
Mn  Semiconductors  Spintronics  Electronics  Gaas  (Ga  Mn)As