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InN layers grown by MOCVD on SrTiO3 substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 312 (3): JAN 15 2010, 2010, 卷号: 312, 期号: 3, 页码: 373-377
Authors:  Jia CH;  Chen YH;  Zhou XL;  Liu GH;  Guo Y;  Liu XL;  Yang SY;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Tio3  Growth Behavior  Mocvd  Inn 了chemical-vapor-deposition  Phase Epitaxy  Pressure