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Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 201, 期号: 0, 页码: 551-555
Authors:  Liu XF;  Liu JP;  Li JP;  Wang YT;  Li LY;  Sun DZ;  Kong MY;  Lin LY;  Liu XF,Chinese Acad Sci,Inst Semicond,Mat Ctr,Beijing 100083,Peoples R China.
Adobe PDF(100Kb)  |  Favorite  |  View/Download:803/259  |  Submit date:2010/08/12
Reverse Leakage Current  Crystalline Quality  Sige Se P-n Heterojunction Diodes  Layers