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The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
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Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(341Kb)  |  Favorite  |  View/Download:1776/463  |  Submit date:2010/05/04
Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 2, 页码: 278-281
Authors:  Yang AL;  Wei HY;  Liu XL;  Song HP;  Zheng GL;  Guo Y;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Liu XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Nanostructures  Metalorganic Chemical Vapor Deposition  Zinc Compounds  Semiconducting Ii-vi Materials  
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 16, 页码: Art. No. 163301
Authors:  Yang AL;  Song HP;  Wei HY;  Liu XL;  Wang J;  Lv XQ;  Jin P;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1277/529  |  Submit date:2010/03/08
Conduction Bands  Iii-v Semiconductors  Ii-vi Semiconductors  Indium Compounds  Interface States  Polarisation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  Zinc Compounds