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HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 547, 页码: 125800
Authors:  Guiying Shen;   Youwen Zhao;   Jing Sun;   Jingming Liu;   Hui Xie;   Jun Yang;  Zhiyuan Dong
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MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 542, 页码: 125688
Authors:  Yong Li;   Xiaoming Li;   Ruiting Hao;   Jie Guo;   Yunpeng Wang;   Abuduwayiti Aierken;   Yu Zhuang;   Faran Chang;   Suning Cui;   Kang Gu;   Guoshuai Wei;   Xiaole Ma;   Guowei Wang;   Yingqiang Xu;   Zhichuan Niu
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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:  Li, HJ;  Liu, CB;  Liu, GP;  Wei, HY;  Jiao, CM;  Wang, JX;  Zhang, H;  Jin, DD;  Feng, YX;  Yang, SY;  Wang, LS;  Zhu, QS;  Wang, ZG
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Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 407, 页码: 37-41
Authors:  Huang, Jianliang;  Ma, Wenquan;  Wei, Yang;  Zhang, Yanhua;  Cui, Kai;  Shao, Jun
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Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 391, 页码: 111-115
Authors:  Wang, HT;  Jia, CH;  Xu, JK;  Chen, YH;  Chen, XW;  Zhang, WF
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Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 394, 页码: 7-10
Authors:  Zhang, YH;  Wei, TB;  Wang, JX;  Fan, C;  Chen, Y;  Hu, Q;  Li, JM
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Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 387, 页码: 101-105
Authors:  Yang, JK;  Wei, TB;  Huo, ZQ;  Hu, Q;  Zhang, YH;  Duan, RF;  Wang, JX
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The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 396, 页码: 33-37
Authors:  Du, WN;  Yang, XG;  Wang, XY;  Pan, HY;  Ji, HM;  Luo, S;  Yang, T;  Wang, ZG
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Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 55-60
Authors:  Wang, XY;  Yang, XG;  Du, WN;  Ji, HM;  Luo, S;  Yang, T
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