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2~5μm InAs/GaSb超晶格红外探测器 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  徐应强;  汤宝;  王国伟;  任正伟;  牛智川
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MBE方法在GaAs(001)衬底上外延生长GaSb膜 期刊论文
功能材料, 2010, 卷号: 41, 期号: 4, 页码: 734-736
Authors:  郝瑞亭;  申兰先;  邓书康;  杨培志;  涂洁磊;  廖华;  徐应强;  牛智川
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GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-11-11, 公开日期: 4012
Inventors:  汤宝;  周志强;  郝瑞亭;  任正伟;  徐应强;  牛智川
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GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-10-21, 公开日期: 4010
Inventors:  周志强;  郝瑞亭;  汤 宝;  任正伟;  徐应强;  牛智川
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InAs/GaSb superlattices for photodetection in short wavelength infrared range 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2009, 卷号: 52, 期号: 4, 页码: 124-126
Authors:  Guo J;  Peng ZY;  Sun WG;  Xu YQ;  Zhou ZQ;  Niu ZC;  Guo J NW Polytech Univ Xian 710000 Shaanxi Peoples R China. E-mail Address: jieggg1020@sina.com
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Superlattices  Inas/gasb  Short Wavelength  Infrared Detector  
SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2009, 卷号: 28, 期号: 3, 页码: 165-+
Authors:  Guo J;  Peng ZY;  Lu ZX;  Sun WG;  Hao RT;  Zhou ZQ;  Xu YQ;  Niu ZC;  Guo J NW Polytech Univ Sch Mat Xian 710072 Peoples R China.
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Superlattice  Inas/gasb Infrared Detector  Molecular-beam Epitaxy (Mbe)  Spectral Response  
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: Art. No. 067801
Authors:  Wang PF;  Xiong YH;  Wang HL;  Huang SS;  Ni HQ;  Xu YQ;  He ZH;  Niu ZC;  Wang PF Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 100083 Peoples R China. E-mail Address: pfwang@semi.ac.cn
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Mu-m  Laser  Islands  
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 4, 页码: Art. No. 047802
Authors:  Guo J;  Sun WG;  Peng ZY;  Zhou ZQ;  Xu YQ;  Niu ZC;  Guo J NW Polytech Univ Sch Mat Xian 710000 Peoples R China. E-mail Address: jieggg1020@sina.com
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Inas  
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 卷号: 9, 期号: 2, 页码: 1333-1336
Authors:  Wu BP;  Wu DH;  Xiong YH;  Huang SS;  Ni HQ;  Xu YQ;  Niu ZC;  Wu BP Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Inas Quantum Dots  Metamorphic Buffer  Molecular Beam Epitaxy  
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 2, 页码: Art. No. 028102
Authors:  Tang B;  Xu YQ;  Zhou ZQ;  Hao RT;  Wang GW;  Ren ZW;  Niu ZC;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn
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Inas/ga1-xinxsb Superlattice  Gasb  Heterojunctions  Photodiodes  Segregation  Layers  Inas  Alsb