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一种独立供应金属卤化物的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  段瑞飞;  王军喜;  曾一平;  李晋闽
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一种制备氮化物单晶衬底的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  段瑞飞;  刘喆;  钟兴儒;  魏同波;  马平;  王军喜;  曾一平;  李晋闽
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砷化镓衬底上的多层变形缓冲层的制作方法 专利
专利类型: 发明, 申请日期: 2008-06-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高宏玲;  曾一平;  段瑞飞;  王宝强;  朱战平;  崔利杰
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Hillocks and hexagonal pits in a thick film grown by HVPE 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 12, 页码: 1556-1559
Authors:  Wei TB;  Duan RF;  Wang JX;  Li JM;  Huo ZQ;  Zeng YP;  Wei TB Chinese Acad Sci Inst Semicond Res & Dev Ctr Semicond Lighting Technol Beijing 100083 Peoples R China. E-mail Address: tbwei@semi.ac.cn
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Gan  Hvpe  Hillocks  Pits  Cathodoluminescence  
HVPE气相外延法在c面蓝宝石上选区外延生长GaN及其表征 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 3, 页码: 530-533
Authors:  林郭强;  曾一平;  段瑞飞;  魏同波;  马平;  王军喜;  刘喆;  王晓亮;  李晋闽
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Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1242-1245
Authors:  Ma Zhifang;  Wang Yutian;  Jiang Desheng;  Zhao Degang;  Zhang Shuming;  Zhu Jianjun;  Liu Zongshun;  Sun Baojuan;  Duan Ruifei;  Yang Hui;  Liang Junwu
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