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Theory and experiment of two-photon 'direct' interference for type-II spontaneous parametric down-conversion with an ultrafast pulse laser pump 期刊论文
JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS, 2002, 卷号: 4, 期号: 5, 页码: 260-264
Authors:  Li SL;  Liu B;  Sun BQ;  Jiang DS;  Xu ZY;  Li SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Spontaneous Parametric Down-conversion  Femtosecond Pulse Laser  Entangled Two-photon State  Double-slit Experiments  Coincidence Measurements  Ghost Interference  Quantum  Entanglement  Diffraction  Visibility  Coherence  Fringes  Light  
Spatial interference effect of two-photon in femtosecond-pulse pumped spontaneous parametric down-conversion 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 3, 页码: 345-347
Authors:  Lu SL;  Sun BQ;  Liu B;  Jiang DS;  Xu ZY;  Lu SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Double-slit Experiments  Coincidence Measurements  Ghost Interference  Quantum  Light  Distinguishability  Entanglement  Coherence  
Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 499-499
Authors:  Jia R;  Jiang DS;  Liu HY;  Wei YQ;  Xu B;  Wang ZG;  Jia R,Chinese Acad Sci,Inst Semicond,Natl Lab Supelattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
Authors:  Jia R;  Jiang DS;  Liu HY;  Wei YQ;  Xu B;  Wang ZG;  Jia R,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(156Kb)  |  Favorite  |  View/Download:928/377  |  Submit date:2010/08/12
Nanostructures  Molecular Beam Epitaxy  Semiconductor Iii-v Materials  Laser Diodes  1.3 Mu-m  Continuous-wave Operation  Temperature-dependence  Lasing Characteristics  1.3-mu-m  Photoluminescence  Gain  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
Authors:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Luminescence  Localization  
Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 8, 页码: 1203-1206
Authors:  Liang XG;  Jiang DS;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(239Kb)  |  Favorite  |  View/Download:940/228  |  Submit date:2010/08/12
Band  Luminescence  Gaas  Localization  Emission  Behavior  Shift  Ingan  
Absolute measurement of detector quantum efficiency using optical parametric down-conversion pumped by femtosecond laser pulses 期刊论文
MEASUREMENT SCIENCE & TECHNOLOGY, 2002, 卷号: 13, 期号: 2, 页码: 186-189
Authors:  Lu SL;  Liu B;  Sun BQ;  Xu ZY;  Jiang DS;  Lu SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Detector Quantum Efficiency  Optical Parametric Down-conversion  Femtosecond Laser Pulses  Photodetectors  
GaInNAs/GaAs量子阱的光致发光谱和光调制反射谱 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 12, 页码: 1281-1285
Authors:  梁晓甘;  江德生;  边历峰;  潘钟;  李联合;  吴荣汉
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The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 2, 页码: 261-266
Authors:  Liang XG;  Jiang DS;  Sun BQ;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(137Kb)  |  Favorite  |  View/Download:1240/315  |  Submit date:2010/08/12
Photoluminescence  Molecular Beam Epitaxy  Quantum Wells  Iii-v Semiconductors  Molecular-beam Epitaxy  Single-quantum-well  Luminescence  Gaas  Localization  Behavior  Layer  
Lasing of CdSexS1-x quantum dots in a glass spherical microcavity 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 卷号: 14, 期号: 25, 页码: 6395-6401
Authors:  Lu SL;  Jiang DS;  Jia R;  An L;  Bian LF;  Liang XG;  Ma BS;  Sun BQ;  Lu SL,Univ New S Wales,Dept Phys,Sydney,NSW,Australia.
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Laser  Photoluminescence