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Growth and photoluminescence of InAlGaN films 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang ZG;  Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1298/347  |  提交时间：2010/10/29
Multiple-quantum Wells  Quaternary Alloys  Optical-properties  
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)  |  收藏  |  浏览/下载：1226/308  |  提交时间：2010/10/29
Buffer Layer  Substrate  Diodes  Growth  
Single steady frequency and narrow line width external cavity semiconductor laser 会议论文
ADVANCED CHARACTERIZATION TECHNIQUES FOR OPTICS, SEMICONDUCTORS, AND NANOTECHNOLOGIES, 5188, SAN DIEGO, CA, AUG 03-05, 2003
作者:  Zhao WR;  Jiang PF;  Xie FZ;  Zhao WR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1209/257  |  提交时间：2010/10/29
External Cavity Semiconductor Laser  Light Feedback  Single Longitudinal Mode  Spectral Line Width  Feedback  Diode  
MOCVD growth of high quality crack-free GaN on Si(III) substrates 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Zhang BS;  Zhu JJ;  Wang YT;  Yang H;  Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1362/302  |  提交时间：2010/10/29
Vapor-phase Epitaxy  Layers  Aln  
Quantum dynamics of coupled quantum-dot qubits and dephasing effects induced by detections 会议论文
NANO SCIENCE AND TECHNOLOGY NOVEL STRUCTURES AND PHENOMENA, Kowloon, PEOPLES R CHINA, 2002
作者:  Jiang ZT;  Peng J;  You JQ;  Li SS;  Zheng HZ;  Jiang ZT Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(155Kb)  |  收藏  |  浏览/下载：1137/222  |  提交时间：2010/10/29
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Lei ZL;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1160/233  |  提交时间：2010/10/29
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1576/334  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation  
MMI optical couplers and switches with SOI technology 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Yu JZ;  Wang XL;  Liu JW;  Yan QF;  Xia JS;  Fan ZC;  Wang ZT;  Chen SW;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(232Kb)  |  收藏  |  浏览/下载：1373/346  |  提交时间：2010/10/29
Wave-guides  
2 x 2 electrooptical switch in silicon-on-insulator waveguide 会议论文
2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, Kowloon, PEOPLES R CHINA, DEC 16-18, 2003
作者:  Yan QF;  Yu JZ;  Chen SW;  Fan ZC;  Xia JS;  Liu ZL;  Yan QF Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(205Kb)  |  收藏  |  浏览/下载：1162/332  |  提交时间：2010/10/29
Devices  
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:  Leung BH;  Fong WK;  Surya C;  Lu LW;  Ge WK;  Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1337/281  |  提交时间：2010/10/29
Gan  Low-frequency Noise  Deep Levels  Deep Level Transient Fourier Spectroscopy  Devices