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Design and fabrication of GaAs OMIST photodetector 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Kang XJ;  Lin SM;  Liao QW;  Gao JH;  Liu SA;  Cheng P;  Wang HJ;  Zhang CH;  Wang QM;  Kang XJ Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1605/479  |  提交时间：2010/10/29
Photodetector  Oxidation  Materials Growth  
A study on GaP/Si heterostructures grown by GS-MBE 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yu JZ;  Chen BW;  Yu Z;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(243Kb)  |  收藏  |  浏览/下载：1039/241  |  提交时间：2010/10/29
Gap/si Heterostructure  Gs-mbe  Lattice Match  X-ray Double Crystal Diffraction  Photoluminescence (Pl)  
The SPER and characteristics of Si1-yCy alloys 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yu Z;  Yu JZ;  Cheng BW;  Lei ZL;  Li DZ;  Wang QM;  Liang JW;  Yu Z Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1245/206  |  提交时间：2010/10/29
Si1-ycy Alloys  Ion implantatIon  Solid Phase Epitaxy Recrystallization  
Preparation and photoluminescence of nc-Si/SiO2 MQW 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Cheng BW;  Yu JZ;  Yu Z;  Lei ZL;  Li DZ;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(416Kb)  |  收藏  |  浏览/下载：1278/350  |  提交时间：2010/10/29
On the nature of iron in InP: A FTIR study 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Lao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(167Kb)  |  收藏  |  浏览/下载：1236/265  |  提交时间：2010/10/29
Iron  Phonon Sideband  Semi-insulating  Inp  
Dynamics of formation of defects in annealed InP 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1186/387  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yan XJ;  Zhu HL;  Wang W;  Xu GY;  Zhou F;  Ma CH;  Wang XJ;  Tian HL;  Zhang JY;  Wu RH;  Wang QM;  Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(536Kb)  |  收藏  |  浏览/下载：1542/496  |  提交时间：2010/10/29
Semi-insulating  Fe-doped  Mocvd  
Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Si JJ;  Yang QQ;  Wang HJ;  Wang QM;  Si JJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：1106/189  |  提交时间：2010/10/29
Si/sige  Quantum Dot  Electroluminescence  Photoluminescence  
Photoluminescence measurements on erbium-doped silicon 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(310Kb)  |  收藏  |  浏览/下载：1224/233  |  提交时间：2010/10/29
Erbium-doped Silicon  Photoluminescence  Energy Transfer