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Evolution of InAs nanostructures grown by droplet epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 3, 页码: Art.No.033112
Authors:  Zhao C;  Chen YH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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