SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-3 of 3 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(1941Kb)  |  Favorite  |  View/Download:1512/395  |  Submit date:2011/07/05
Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 1, 页码: 533-536
Authors:  Sun S;  Wu J;  Liu FQ;  Zu HZ;  Chen YH;  Ye XL;  Jiang WH;  Xu B;  Wang ZG;  Sun S,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(152Kb)  |  Favorite  |  View/Download:788/247  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Inas Islands  Inp(001)  Growth  Gaas  Semiconductors  Thickness  Lasers  Ingaas  Size  
Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 9, 页码: 5433-5436
Authors:  Liu HY;  Xu B;  Chen YH;  Ding D;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(276Kb)  |  Favorite  |  View/Download:1001/296  |  Submit date:2010/08/12
Inas Islands  Growth  Gaas  Relaxation  Evolution  Gaas(100)  Thickness  Density  Size