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Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321
Authors:  Zhang BS;  Wu M;  Liu JP;  Chen J;  Zhu JJ;  Shen XM;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Boyd AR;  Zhang, BS, Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Weixing Rd 7083, Changchun 130022, Peoples R China. 电子邮箱地址: baoshunzhang@126.com
Adobe PDF(264Kb)  |  Favorite  |  View/Download:1377/552  |  Submit date:2010/03/09
X-ray Diffraction  
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(102Kb)  |  Favorite  |  View/Download:1883/827  |  Submit date:2010/08/12
X-ray Diffraction  Metalorganic Vapor Phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Buffer Layer  Gan  Growth  
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:  Feng G;  Zheng XH;  Fu Y;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(120Kb)  |  Favorite  |  View/Download:1143/332  |  Submit date:2010/08/12
X-ray Diffraction  Etching  Metalorganic Vapor-phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Light-emitting-diodes  Vapor-phase Epitaxy  Films  Dislocations  Density  Growth  Layers