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Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
Authors:  Bian LF;  Jiang DS;  Lu SL;  Bian LF,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(173Kb)  |  Favorite  |  View/Download:917/254  |  Submit date:2010/08/12
Interdiffusion  Post-annealing  Quantum Wells  Gainnas/gaas  Molecular-beam Epitaxy  Carrier Localization  Gainnas  Luminescence  Origin  Gaasn  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 501-505
Authors:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(112Kb)  |  Favorite  |  View/Download:1149/382  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn