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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)
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浏览/下载:1421/291
  |  
提交时间:2010/03/29
Atomic Hydrogen
Molecular Beam Epitaxy
Step Arrays
Molecular-beam Epitaxy
Atomic-hydrogen
Vicinal Surface
Quantum Dots
Growth
Temperature
Irradiation
Mechanism
Mbe
Surface morphology evolution of strained InAs/GaAs(331)a films
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Gong, M (Gong, Meng)
;
Fang, ZD (Fang, Zhidan)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)
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浏览/下载:1274/288
  |  
提交时间:2010/03/29
Surface Morphology Evolution
Inas Nanostructures
Island-pit Pairs
Molecular-beam Epitaxy
Quantum Dots
Cooperative Nucleation
Heteroepitaxy
Transition
Islands
Growth
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
;
Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)
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浏览/下载:1589/334
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提交时间:2010/03/29
Quantum Dots
Photoluminescence
Combination Layer
1.3 Mu-m
Lasers
Inalas
Electronic structure and optical property of semiconductor nanocrystallites
会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Xia JB
;
Chang K
;
Li SS
;
Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)
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浏览/下载:1089/297
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提交时间:2010/11/15
Semiconductor Cluster
Self-assembled Quantum Dot
Diluted Magnetic Semiconductor
Electronic Structure
Resonant Tunneling
Quantum Dots
Exciton-states
Spheres
Controllable growth of semiconductor nanometer structures
会议论文
MICROELECTRONICS JOURNAL, 34 (5-8), FORTALEZA, BRAZIL, DEC 08-13, 2002
作者:
Wang ZG
;
Wu J
;
Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(249Kb)
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浏览/下载:1156/233
  |  
提交时间:2010/11/15
Inas Quantum Dots
Self-organization
Monolayer Coverage
Density
Gaas
Islands
Inp(001)
Epitaxy
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
;
Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1188/0
  |  
提交时间:2010/10/29
Molecular Beam Epitaxy
Ingaas Islands
Photolumineseence
Line-width
1.3 Mu-m
Inas/gaas Quantum Dots
Optical-properties
Cap Layer
Gaas
Luminescence
Strain
Self-assembled quantum dots, wires and quantum-dot lasers
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Wang ZG
;
Chen YH
;
Liu FQ
;
Xu B
;
Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(289Kb)
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收藏
  |  
浏览/下载:1277/323
  |  
提交时间:2010/11/15
Low Dimensional Structures
Strain
Molecular Beam Epitaxy
Quantum Dots
Semiconducting Iii-v Materials
Laser Diodes
Well Lasers
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
;
Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)
  |  
收藏
  |  
浏览/下载:1138/221
  |  
提交时间:2010/11/15
Crystal Morphology
Quantum Dots
Molecular Beam Epitaxy
Semiconducting Gallium Arsenide
Semiconducting Indium Gallium Arsenide
1.35 Mu-m
Gaas-surfaces
Photoluminescence
Islands
Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Liu SM
;
Guo HQ
;
Zhang ZH
;
Li R
;
Chen W
;
Wang ZG
;
Liu SM Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(136Kb)
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收藏
  |  
浏览/下载:1454/457
  |  
提交时间:2010/11/15
Cdse
Cdse/cds
Nanoclusters
Quantum Dots
Semiconductor Nanocrystallites
Size
Exciton
Clusters
Dark
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Sun ZZ
;
Liu FQ
;
Wu J
;
Ye XL
;
Ding D
;
Xu B
;
Liang JB
;
Wang ZG
;
Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)
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收藏
  |  
浏览/下载:1309/262
  |  
提交时间:2010/11/15
Self-assembled Quantum Dots
Inp Substrate
High Index
Mbe
In(Ga
Molecular-beam-epitaxy
Al)as/inAlas/inp
Vapor-phase Epitaxy
Gaas
Islands
Photoluminescence
Inp(001)
Growth
Lasers