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Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 18, 页码: Art. No. 182111
Authors:  Xu, XQ;  Liu, XL;  Han, XX;  Yuan, HR;  Wang, J;  Guo, Y;  Song, HP;  Zheng, GL;  Wei, HY;  Yang, SY;  Zhu, QS;  Wang, ZG;  Xu, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:;
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Aluminium Compounds  Dislocation Density  Electron Mobility  Gallium Compounds  Iii-v Semiconductors  Interface Roughness  Semiconductor Heterojunctions  Two-dimensional Electron Gas  Wide Band Gap Semiconductors  
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Authors:  Luo, WJ;  Wang, XL;  Xiao, HL;  Wang, CM;  Ran, JX;  Guo, LC;  Li, JP;  Liu, HX;  Chen, YL;  Yang, FH;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址:
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Algan/gan  High Electron Mobility Transistor (Hemt)  Si (111)  
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Authors:  Gao, HL;  Zeng, YP;  Wang, BQ;  Zhu, ZP;  Wang, ZG;  Gao, HL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址:
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Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors