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Electroabsorption-modulated DFB laser integrated with dual-waveguide spot-size converter - art. no. 60200N 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Hou, LP;  Wang, W;  Zhu, HL;  Wang, BJ;  Zhou, F;  Hou, LP, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(258Kb)  |  收藏  |  浏览/下载：1679/444  |  提交时间：2010/03/29
Dfb Laser Diode  Electroabsorption Modulator  Spot-size Converters  Selective Area Growth  Quantum Well Intermixing  Dual-core Structure  Monolithic Integration  
Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Zhang, SJ;  Wen, JM;  Song, HP;  Zhu, NH;  Zhang, SJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1409/423  |  提交时间：2010/03/29
Semiconductor Laser Diode  Subtraction Method  Scattering Parameters  Intrinsic Response  Thermal Effect  Frequency-response  
Single steady frequency and narrow line width external cavity semiconductor laser 会议论文
ADVANCED CHARACTERIZATION TECHNIQUES FOR OPTICS, SEMICONDUCTORS, AND NANOTECHNOLOGIES, 5188, SAN DIEGO, CA, AUG 03-05, 2003
作者:  Zhao WR;  Jiang PF;  Xie FZ;  Zhao WR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1254/257  |  提交时间：2010/10/29
External Cavity Semiconductor Laser  Light Feedback  Single Longitudinal Mode  Spectral Line Width  Feedback  Diode  
Real-time far distance micro-vibration measurement using an external cavity semiconductor laser interferometer with a feedback control system 会议论文
OPTICAL DESIGN AND TESTING, 4927, SHANGHAI, PEOPLES R CHINA, OCT 15-18, 2002
作者:  Zhao WR;  Jiang PF;  Xie FZ;  Zhao WR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(137Kb)  |  收藏  |  浏览/下载：1156/269  |  提交时间：2010/10/29
External Cavity Semiconductor Laser Interferometer  Far Distance  Micro-vibration Measurement  Feedback Control  Displacement Measurement  Diode Interferometer  Phase  
Design of side-pumped Nd : YAG lasers 会议论文
HIGH-POWER LASERS AND APPLICATIONS II, 4914, SHANGHAI, PEOPLES R CHINA, OCT 15-18, 2002
作者:  Liu YA;  Fang GZ;  Ma XY;  Xiao JW;  Liu YA CAS Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(182Kb)  |  收藏  |  浏览/下载：1296/346  |  提交时间：2010/10/29
Diode Laser  Side-pumped  Ray Tracing  Matrix  Non-paraxial Light  Rod Laser  
650nm AlGaInP quantum well lasers for the application of DVD 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Chen LH;  Ma XY;  Guo L;  Ma J;  Ding HY;  Cao Q;  Wang LM;  Zhang GZ;  Yang YL;  Wang GH;  Tan MQ;  Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1414/409  |  提交时间：2010/10/29
Dvd  Laser Diode  Visible  Algainp  Mocvd  Operation  Diodes  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1198/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Lian P;  Wang LM;  Zhang XY;  Yang YL;  Zhang HQ;  Wang GH;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(307Kb)  |  收藏  |  浏览/下载：1243/275  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  
The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang LM;  Yang YL;  Zhang HQ;  Zhang XY;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1206/250  |  提交时间：2010/10/29
Algainp  Quantum Well  Laser Diode  Mocvd  Dvd