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Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Xu Y;  Zhu XP;  Ye XJ;  Kang XN;  Cao Q;  Guo L;  Chen LH;  Xu Y Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(559Kb)  |  收藏  |  浏览/下载：1720/645  |  提交时间：2010/10/29
Finite-difference Methods  Algainp Laser Diodes  Risa  Operation  Layer  Nm  
High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers 会议论文
IN-PLANE SEMICONDUCTOR LASERS IV, 3947, SAN JOSE, CA, JAN 24-25, 2000
作者:  Xiu ZT;  Zhang JM;  Ma XY;  Yang GW;  Shen GD;  Chen LH;  Xiu ZT Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1702/403  |  提交时间：2010/10/29
Sqw Lasers  Ingaasp  Power  Fiber  Nm