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The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S 会议论文
ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Li J;  An JM;  Wang HJ;  Xia JL;  Gao DS;  Hu XW;  Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(423Kb)  |  收藏  |  浏览/下载：1425/412  |  提交时间：2010/03/29
Porous Silicon  
Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I 会议论文
Nanophotonic Materials III丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Diego, CA, AUG 13-14, 2006
作者:  Feng W;  Pan JQ;  Zhou F;  Wang LF;  Bian J;  Wang BJ;  An X;  Zhao LJ;  Zhu HL;  Wang W;  Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(520Kb)  |  收藏  |  浏览/下载：1325/268  |  提交时间：2010/03/29
Inp  
Mode analysis of the UV-written channel waveguide - art. no. 60340J 会议论文
ICO20 Optical Design and Fabrication丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Xia JL;  Wu YD;  An JM;  Li J;  Gao DS;  Hu XW;  Xia, JL, Chinese Acad Sci, Inst Semicond, Res & Dev, Ctr Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(291Kb)  |  收藏  |  浏览/下载：1261/296  |  提交时间：2010/03/29
Uv-written  
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Shen, WJ;  Duan, Y;  Wang, J;  Wang, QY;  Zeng, YP;  Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  收藏  |  浏览/下载：1665/615  |  提交时间：2010/03/29
Zno  Mocvd  Thermal Annealing  Photoluminescence  X-ray Diffraction  Atomic Force Microscopy  Pulsed-laser Deposition  Thin-films  Photoluminescence  Mechanisms  Epitaxy  Cvd  Si  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1676/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding 会议论文
Optoeletronic Materials and Devices丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Gwangju, SOUTH KOREA, SEP 05-07, 2006
作者:  Yang GH (Yang Guohua);  He GR (He Guorong);  Zheng WH (Zheng Wanhua);  Chen LH (Chen Lianghui);  Yang, GH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(1303Kb)  |  收藏  |  浏览/下载：2575/453  |  提交时间：2010/03/29