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Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices 会议论文
NEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:  Jin P (Jin P.);  Lv XQ (Lv X. Q.);  Liu N (Liu N.);  Zhang ZY (Zhang Z. Y.);  Wang ZG (Wang Z. G.);  Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zgwang@red.semi.ac.cn
Adobe PDF(141Kb)  |  收藏  |  浏览/下载：1627/330  |  提交时间：2010/11/01
Superluminescent Diodes  
A Novel RFID Tag Chip with Temperature Sensor in Standard CMOS Process 会议论文
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS: 1109-1112 2010, Paris, FRANCE, MAY 30-JUN 02, 2010
作者:  Zhang Q (Zhang Qi);  Feng P (Feng Peng);  Zhou SH (Zhou Shenghua);  Geng ZQ (Geng Zhiqing);  Wu NJ (Wu Nanjian)
Adobe PDF(627Kb)  |  收藏  |  浏览/下载：1547/352  |  提交时间：2011/07/14
Multi channel micro neural probe fabricated with SOI 会议论文
2009 ICME INTERNATIONAL CONFERENCE ON COMPLEX MEDICAL ENGINEERING, Tempe, AZ, APR 09-11, 2009
作者:  Wang SJ (Wang Shujing);  Pei WH (Pei Weihua);  Guo K (Guo Kai);  Gui Q (Gui Qiang);  Wang Y (Wang Yu);  Zhang X (Zhang Xu);  Tang J (Tang Jun);  Chen HD (Chen Hongda);  Pei, WH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(231Kb)  |  收藏  |  浏览/下载：1911/473  |  提交时间：2010/03/09
Microelectrode Arrays  
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
JOURNAL OF APPLIED PHYSICS
作者:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen, J, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
Adobe PDF(1459Kb)  |  收藏  |  浏览/下载：1312/208  |  提交时间：2010/03/09
Emission  
Low Power Integrated Circuits for Wireless Neural Recording Applications 会议论文
2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), Macao, PEOPLES R CHINA, NOV 30-DEC 03, 2008
作者:  Zhang X;  Pei WH;  Gui Q;  Chen HD;  Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(1523Kb)  |  收藏  |  浏览/下载：1493/332  |  提交时间：2010/03/09
System  
A Novel Low-Power Digital Baseband Circuit for UHF RFID Tag with Sensors 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Zhang, Q;  Li, YL;  Wu, NJ;  Zhang, Q, Chinese Acad Sci, Inst Semicond, Key State Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(2711Kb)  |  收藏  |  浏览/下载：1288/378  |  提交时间：2010/03/09
An 8-b 1-GSmaples/s CMOS cascaded folding and interpolating ADC 会议论文
2007 International Workshop on Electron Devices and Semiconductor Technology, Beijing, PEOPLES R CHINA, JUN 03-04, 2007
作者:  Zhu, XB (Zhu, Xubin);  Ni, WN (Ni, Weining);  Zhang, Q (Zhang, Qiang);  Shi, Y (Shi, Yin);  Zhu, XB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1317Kb)  |  收藏  |  浏览/下载：1513/398  |  提交时间：2010/03/29
Analog-to-digital Converter  Cmos Analog Integrated Circuit  Folding-and-interpolating  Cascading  
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1444/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Zhao, Q;  Pan, JQ;  Zhang, J;  Zhu, HL;  Wang, W;  Zhao, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qzhao@red.semi.ac.cn
Adobe PDF(153Kb)  |  收藏  |  浏览/下载：1314/345  |  提交时间：2010/03/29
Selective Area Growth  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1667/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation