中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共4条，第1-4条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
无权访问的条目 期刊论文
作者:  Zhang W (Zhang W.);  Wang LJ (Wang L. J.);  Zhang JC (Zhang J. C.);  Zhang QD (Zhang Q. D.);  Li L (Li L.);  Liu JQ (Liu J. Q.);  Liu FQ (Liu F. Q.);  Wang ZG (Wang Z. G.);  Zhang, W, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail Address: ljwang@semi.ac.cn
Adobe PDF(594Kb)  |  收藏  |  浏览/下载：1291/469  |  提交时间：2010/10/11
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  收藏  |  浏览/下载：1713/433  |  提交时间：2010/03/09
Algan/gan Hemts  
Kinetic Monte Carlo simulation of semiconductor quantum dot growth 会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:  Zhao C;  Chen YH;  Sun J;  Lei W;  Cui CX;  Yu LK;  Li K;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(3368Kb)  |  收藏  |  浏览/下载：1536/327  |  提交时间：2010/03/29
Monte Carlo Simulation  
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Shou-Li Z;  De-Ping X;  Ya-Li I;  Hai-Lin C;  Yin-Zhe C;  Ang M;  Ji-He L;  Jun-Hua G;  Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1492/301  |  提交时间：2010/03/09
Rce- P-i-n-pd