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Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:  Zhou, W;  Yang, JL;  Li, Y;  Yang, FH;  Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(267Kb)  |  收藏  |  浏览/下载：1397/372  |  提交时间：2010/03/09
Bulge Test  Fracture Property  Silicon Nitride  Weibull Distribution Function  
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, FW;  Gao, HY;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)  |  收藏  |  浏览/下载：2881/891  |  提交时间：2010/03/09
Gan  Mocvd  Led  Nano-pattern  Sem  Hrxrd  Pl  
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Gao, HY;  Yan, FW;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, A35 Qinghua E Rd, Beijing 100083, Peoples R China.
Adobe PDF(753Kb)  |  收藏  |  浏览/下载：2787/842  |  提交时间：2010/03/09
Pyramidal Patterned Substrate  Ingan/gan  Light-emitting Diode  Wet Etching  
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yang, H;  Chen, Y;  Wang, LB;  Yi, XY;  Fan, JM;  Liu, ZQ;  Yang, FH;  Wang, LC;  Wang, GH;  Zeng, YP;  Li, JM;  Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：7103/2096  |  提交时间：2010/03/09
Gan-based Led  Grinding  Ray Tracing  
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, JC;  Wang, JX;  Liu, NX;  Liu, Z;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(471Kb)  |  收藏  |  浏览/下载：1984/557  |  提交时间：2010/03/09
Algan  Gan Template  A1n Interlayer  Mocvd  Crack  Interference Fringes  
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu, NX;  Yan, JC;  Liu, Z;  Ma, P;  Wang, JX;  Li, JM;  Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)  |  收藏  |  浏览/下载：2244/749  |  提交时间：2010/03/09
Algan  Ht-algan Buffer  Ht-interlayers  Ultraviolet (Uv) Led  
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Yan, JC;  Wang, JX;  Liu, Z;  Liu, NX;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3352Kb)  |  收藏  |  浏览/下载：1130/217  |  提交时间：2010/03/09
Diodes  
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Li, Y;  Yi, XY;  Wang, XD;  Guo, JX;  Wang, LC;  Wang, GH;  Yang, FH;  Zeng, YP;  Li, JM;  Li, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(701Kb)  |  收藏  |  浏览/下载：3969/1521  |  提交时间：2010/03/09
Gan  Led  Plasma  Damage  Etch  Icp  Pecvd  
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhang, Y;  Yan, FW;  Gao, HY;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)  |  收藏  |  浏览/下载：3590/1292  |  提交时间：2010/03/09
Gan  Nitrides  Led  Mocvd  Patterned Sapphire Substrate  Wet Etching  
An Embedded Ultra Low Power Nonvolatile Memory in a Standard CMOS Logic Process 会议论文
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, Hong Kong, PEOPLES R CHINA, DEC 08-10, 2008
作者:  Li, YL (Li, Y-L.);  Feng, P (Feng, P.);  Wu, NJ (Wu, N-J.);  Li, YL, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(719Kb)  |  收藏  |  浏览/下载：1235/428  |  提交时间：2010/03/09
Voltage