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Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs 期刊论文
Electrochemical and Solid-State Letters, 2012, 卷号: 15, 期号: 6, 页码: H179-H181
Authors:  Wang, Lanxiang;  Han, Genquan;  Su, Shaojian;  Zhou, Qian;  Yang, Yue;  Guo, Pengfei;  Wang, Wei;  Tong, Yi;  Lim, Phyllis Shi Ya;  Liu, Bin;  Kong, Eugene Yu-Jing;  Xue, Chunlai;  Wang, Qiming;  Cheng, Buwen;  Yeo, Yee-Chia
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Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature 期刊论文
Nanoscale Research Letters, 2012, 卷号: 7, 页码: 1-11
Authors:  Liu, Zhi;  Cheng, Buwen;  Hu, Weixuan;  Su, Shaojian;  Li, Chuanbo;  Wang, Qiming
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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文
Digest of Technical Papers - Symposium on VLSI Technology, 2012, 页码: 97-98
Authors:  Han, Genquan;  Su, Shaojian;  Wang, Lanxiang;  Zhang, Zheng;  Xue, Chunlai;  Cheng, Buwen;  Yeo, Yee-Chia;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Ivana;  Guo, Pengfei;  Guo, Cheng;  Zhang, Guangze;  Pan, Jisheng
Adobe PDF(882Kb)  |  Favorite  |  View/Download:962/392  |  Submit date:2013/05/07
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文
International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2012, 页码: 6210151
Authors:  Wang, Lanxiang;  Han, Genquan;  Su, Shaojian;  Cheng, Buwen;  Yeo, Yee-Chia;  Zhou, Qian;  Yang, Yue;  Guo, Pengfei;  Wang, Wei;  Tong, Yi;  Lim, Phyllis Shi Ya;  Xue, Chunlai;  Wang, Qiming
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High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules 期刊论文
Technical Digest- International Electron Devices Meeting, IEDM, 2011, 页码: 16.7.1-16.7.3
Authors:  Han, Genquan;  Su, Shaojian;  Zhan, Chunlei;  Zhou, Qian;  Yang, Yue;  Wang, Lanxiang;  Guo, Pengfei;  Wei, Wang;  Wong, Choun Pei;  Shen, Ze Xiang;  Cheng, Buwen;  Yeo, Yee-Chia;  Han, G.
Adobe PDF(1330Kb)  |  Favorite  |  View/Download:1714/704  |  Submit date:2012/06/13
Electron Devices  Germanium  Tin  
Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 页码: 314-316
Authors:  Hu, Weixuan;  Cheng, Buwen;  Xue, Chunlai;  Su, Shaojian;  Liu, Zhi;  Li, Yaming;  Wang, Qiming;  Cheng, B.(cbw@semi.ac.cn)
Adobe PDF(237Kb)  |  Favorite  |  View/Download:1033/400  |  Submit date:2012/06/13
Epitaxial Growth  Germanium  Indium  Photonics  Semiconducting Silicon Compounds  Silicon  
UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation 期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 期号: 1, 页码: 311-313
Authors:  Zhao, Hongwei;  Hu, Weixuan;  Xue, Chunlai;  Cheng, Buwen;  Wang, Qiming;  Zhao, H.(hwzhao@semi.ac.cn)
Adobe PDF(686Kb)  |  Favorite  |  View/Download:1289/555  |  Submit date:2012/06/13
Chemical Vapor Deposition  Photonics