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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Chen H (Chen, Hong);  Bi Y (Bi, Yang);  Deng QW (Deng, Qinwen);  Zhang JW (Zhang, Jingwen);  Hou X (Hou, Xun)
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