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A High-Speed CMOS Image Sensor with Column-Parallel Single Capacitor CDSs and Single-slope ADCs 会议论文
Proceedings of SPIE 卷: 8194 文献号: 819433, Beijing, PEOPLES R CHINA, 2011
作者:  Li QL (Li Quanliang);  Shi C (Shi Cong);  Wu NJ (Wu Nanjian)
Adobe PDF(482Kb)  |  收藏  |  浏览/下载：8394/3325  |  提交时间：2011/12/13
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li, Z (Li, Z.);  Li, CJ (Li, C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1286/373  |  提交时间：2010/03/29
Dlts  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1226/281  |  提交时间：2010/03/29
4h-sic