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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Observation of photogalvanic current for interband absorption in InN films at room temperature
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Tang, CG
;
Chen, YH
;
Liu, Y
;
Zhang, RQ
;
Liu, XL
;
Wang, ZG
;
Zhang, R
;
Zhang, Z
;
Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)
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收藏
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浏览/下载:1781/374
  |  
提交时间:2010/03/09
Quantum-wells
Spin
Measurement and analysis of microwave frequency response of semiconductor optical amplifiers - art. no. 682406
会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:
Liu, J
;
Zhang, SJ
;
Hu, YH
;
Xie, L
;
Huang, YZ
;
Zhu, NH
;
Liu, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(338Kb)
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收藏
  |  
浏览/下载:1300/314
  |  
提交时间:2010/03/09
Semiconductor Optical Amplifier
Microwave Frequency Response
Direct-subtracting Method
Vector Network Analyzer
Multisectional Model
Rate Equation
Steady State
Small-signal State
High resolution interrogation technique based on linear photodiode array spectrometer for fiber Bragg grating Sensors - art. no. 65952C
会议论文
Fundamental Problems of Optoelectronics and Microelectronics III丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Harbin, PEOPLES R CHINA, SEP 12-14, 2006
作者:
Zhang, SW (Zhang, Songwei)
;
Liu, YH (Liu, Yuhang)
;
Li, F (Li, Fang)
;
Zhang, SW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)
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收藏
  |  
浏览/下载:1500/488
  |  
提交时间:2010/03/29
Fiber Bragg Grating Sensor
Interrogation Technique
System
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)
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收藏
  |  
浏览/下载:1204/312
  |  
提交时间:2010/03/29
Deep-level Defects
Fe-doped Inp
Grown Inp
Spectroscopy
Resonance
Wafer
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Jiang DS
;
Bian LF
;
Liang XG
;
Chang K
;
Sun BQ
;
Johnson S
;
Zhang YH
;
Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)
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浏览/下载:1447/405
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Gaassb/gaas
Gaas
Lasers
Gain
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Zhang ZC
;
Ren BY
;
Chen YH
;
Yang SY
;
Wang ZG
;
Zhang ZC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(389Kb)
  |  
收藏
  |  
浏览/下载:1272/254
  |  
提交时间:2010/11/15
Czochralski Method
Growth From Melt
Semiconductor Silicon
Argon Gas Flow
Computer Simulation
Oxygen Content
Furnace Pressure
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells
会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Cheng BW
;
Zhang JG
;
Zuo YH
;
Mao RW
;
Huang CJ
;
Luo LP
;
Yao F
;
Wang QM
;
Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(319Kb)
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收藏
  |  
浏览/下载:1106/201
  |  
提交时间:2010/11/15
Si-ge Alloys
Growth
Layers
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Liu HY
;
Xu B
;
Ding D
;
Chen YH
;
Zhang JF
;
Wu J
;
Wang ZG
;
Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
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收藏
  |  
浏览/下载:1226/319
  |  
提交时间:2010/11/15
Low Dimensional Structures
Molecular Beam Epitaxy
Nanomaterials
Inas Islands
Gaas
Growth
Gaas(100)
Thickness
Density
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:
Lu LW
;
Zhang YH
;
Xu ZT
;
Xu ZY
;
Wang ZG
;
Wang J
;
Ge WK
;
Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(245Kb)
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收藏
  |  
浏览/下载:1217/368
  |  
提交时间:2010/11/15
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Peng CS
;
Chen H
;
Zhao ZY
;
Li JH
;
Dai DY
;
Huang Q
;
Zhou JM
;
Zhang YH
;
Tung CH
;
Sheng TT
;
Wang J
;
Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)
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收藏
  |  
浏览/下载:1423/311
  |  
提交时间:2010/11/15
Threading Dislocation
Si(100)
Layers
Films