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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE
会议论文
Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials, Hangzhou, PEOPLES R CHINA, OCT 16-18, 2006
作者:
Feng W
;
Pan WWJQ
;
Zhu HL
;
Zhao LJ
;
Zhou F
;
Wang LF
;
Wang BJ
;
Bian J
;
An X
;
Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(574Kb)
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  |  
浏览/下载:1445/324
  |  
提交时间:2010/03/29
Vapor-phase Epitaxy
Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I
会议论文
Nanophotonic Materials III丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Diego, CA, AUG 13-14, 2006
作者:
Feng W
;
Pan JQ
;
Zhou F
;
Wang LF
;
Bian J
;
Wang BJ
;
An X
;
Zhao LJ
;
Zhu HL
;
Wang W
;
Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(520Kb)
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浏览/下载:1280/268
  |  
提交时间:2010/03/29
Inp
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Feng, W (Feng, W.)
;
Pan, JQ (Pan, J. Q.)
;
Zhou, F (Zhou, F.)
;
Zhao, LJ (Zhao, L. J.)
;
Zhu, HL (Zhu, H. L.)
;
Wang, W (Wang, W.)
;
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)
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浏览/下载:1176/295
  |  
提交时间:2010/03/29
Buried-heterostructure Lasers
Bandgap Energy Control
Vapor-phase Epitaxy
Pressure Movpe
Converter
High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
San, HS
;
Wen, JM
;
Xie, L
;
Zhu, NH
;
Feng, BX
;
San, HS, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(343Kb)
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  |  
浏览/下载:1403/338
  |  
提交时间:2010/03/29
Optical Heterodyne Technique
Ultra-wideband Frequency Response
Different Frequency Photodetector
Frequency-response Measurement
Multimode Wave-guide
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask
会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:
Feng G
;
Shen XM
;
Zhu JJ
;
Zhang BS
;
Yang H
;
Liang JW
;
Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)
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浏览/下载:1181/308
  |  
提交时间:2010/10/29
Buffer Layer
Substrate
Diodes
Growth
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
会议论文
THIN SOLID FILMS, 395 (1-2), KANAZAWA, JAPAN, NOV 14-17, 2000
作者:
Feng Y
;
Zhu M
;
Liu F
;
Liu J
;
Han H
;
Han Y
;
Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(101Kb)
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  |  
浏览/下载:1219/315
  |  
提交时间:2010/11/15
Poly-si
Structure
Hot-wire
Plasma-enhanced Chemical Vapor Deposition (Pecvd)
Chemical-vapor-deposition
Microcrystalline Silicon
Hydrogen
Electronic characteristics of InAs self-assembled quantum dots
会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4), FUKUOKA, JAPAN, JUL 12-16, 1999
作者:
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
;
Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
Adobe PDF(105Kb)
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  |  
浏览/下载:1103/237
  |  
提交时间:2010/11/15
Inas/gaas Quantum Dots
Self-assembled Structure
Dlts
Pl
Band Offset
Energy-levels
Carrier Relaxation
Spectroscopy
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
;
Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)
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  |  
浏览/下载:937/186
  |  
提交时间:2010/11/15
Electronic-structure
Carrier Relaxation
Energy-levels
Spectroscopy
Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
会议论文
PHYSICA B-CONDENSED MATTER, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:
Wang H
;
Niu ZC
;
Zhu HJ
;
Wang ZM
;
Jiang DS
;
Feng SL
;
Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(119Kb)
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收藏
  |  
浏览/下载:1240/261
  |  
提交时间:2010/11/15
Quantum Dot
Growth Interruption
Quantum Dot Laser
New way to enhance the uniformity of self-organized InAs quantum dots
会议论文
COMPOUND SEMICONDUCTORS 1998, (162), NARA, JAPAN, OCT 12-16, 1998
作者:
Zhu HJ
;
Wang H
;
Wang ZM
;
Cui LQ
;
Feng SL
;
Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(312Kb)
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  |  
浏览/下载:975/173
  |  
提交时间:2010/11/15
Molecular-beam Epitaxy
Threshold
Growth
Laser