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Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Wang XH;  Song AM;  Liu J;  Cheng WC;  Li GH;  Li CF;  Li YX;  Yu JZ;  Wang XH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载:1268/278  |  提交时间:2010/10/29
Gaas/algaas  Quantum Dot Array  Etching Method  Photoluminescence  Wires  
Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:  Liu J;  Gornik E;  Xu SJ;  Zheng HZ;  Liu J Vienna Tech Univ Inst Festkorperelekt Floragasse 7-1 A-1040 Vienna Austria. 电子邮箱地址: j.liu.20@bham.ac.uk
Adobe PDF(267Kb)  |  收藏  |  浏览/下载:1138/190  |  提交时间:2010/11/15
Gaas/alas  Superlattices  Transport  Tunnelling  Landau Level  Negative Differential Conductivity  Low-field Mobility  Semiconductor Superlattice  Temperature-dependence  Conductance  Transport  Localization  Minibands