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Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 7, 页码: Art. No. 075004
Authors:  Wang H;  Wang LL;  Sun X;  Zhu JH;  Liu WB;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Electron-transport  Phase Epitaxy  Nitride Inn  Band-gap  
MOCVD growth of InN using a GaN buffer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2008, 卷号: 43, 期号: 2, 页码: 81-85
Authors:  Wang LL;  Wang H;  Chen J;  Sun X;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Wang, LL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangll@red.semi.ac.cn
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Surface  
Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition 期刊论文
MATERIALS LETTERS, 2007, 卷号: 61, 期号: 2, 页码: 516-519
Authors:  Wang H;  Huang Y;  Sun Q;  Chen J;  Zhu JJ;  Wang LL;  Wang YT;  Yang H;  Wu MF;  Qu YH;  Jiang DS;  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@red.semi.ac.cn
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X-ray Diffraction