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AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu, NX;  Yan, JC;  Liu, Z;  Ma, P;  Wang, JX;  Li, JM;  Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)  |  收藏  |  浏览/下载：2244/749  |  提交时间：2010/03/09
Algan  Ht-algan Buffer  Ht-interlayers  Ultraviolet (Uv) Led  
Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:  Li GH;  Fang ZL;  Su FH;  Ma BS;  Ding K;  Han HX;  Sou IK;  Ge WK;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1386/261  |  提交时间：2010/11/15
Optical-absorption  Zns-te  Transition  Edge  
Integrated tapered MMI couplers in the silicon-on-insulator technology 会议论文
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, CHIBA, JAPAN, JUL 15-19, 2001
作者:  Wei HZ;  Yu JZ;  Liu ZG;  Ma HZ;  Li GH;  Zhang XF;  Wang LC;  Wei HZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1398/452  |  提交时间：2010/10/29
Devices  
VCSEL based optoelectronic multiple chip modules 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Chen HD;  Liang K;  Du Y;  Huang YZ;  Tiang J;  Ma XY;  Wu RH;  Li SY;  Guo WL;  Xu GJ;  Wang Y;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(129Kb)  |  收藏  |  浏览/下载：1354/289  |  提交时间：2010/10/29
Vcsel  Photodetector  Cmos  Mcm  Optoelectronic Integration  Optical Interconnects  Surface-emitting Lasers  Mqw Modulators  Integration  Circuits  Vlsi  
Integrated multimode interference couplers in silicon-on insulator 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Wei HZ;  Yu YZ;  Zhang XF;  Liu ZL;  Ma HZ;  Li GH;  Shi W;  Fang CS;  Wei HZ Chinese Acad Sci Inst Semicond State Key Lab INtegrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(118Kb)  |  收藏  |  浏览/下载：1145/251  |  提交时间：2010/10/29
Soi  Multimode Interference  Optical Waveguide Device  Integrated Optics  Power Splitters  
Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes 会议论文
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 3938, SAN JOSE, CA, JAN 26-27, 2000
作者:  Wang GH;  Ma XY;  Zhang YF;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices Beijing 100083 Peoples R China.
收藏  |  浏览/下载：989/0  |  提交时间：2010/10/29
Native Oxided Alas  Current Blocking Layer  Algainp  High Brightness Light Emitting Diodes  
Experimental study on tunable external cavity photodetectors 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Ren XM;  Liu K;  Huang YQ;  Liu LY;  Li JX;  Guo W;  Liao QW;  Ma XY;  Kang XJ;  Campbell JC;  Ren XM Beijing Univ Posts & Telecommun Beijing 100876 Peoples R China.
Adobe PDF(94Kb)  |  收藏  |  浏览/下载：1370/392  |  提交时间：2010/11/15
External Cavity Photodetector  Tunable Photodetector  Optoelectronic Device  Wavelength  
Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Wang YQ;  Liao XB;  Diao HW;  He J;  Ma ZX;  Yue GZ;  Shen SR;  Kong GL;  Zhao YW;  Li ZM;  Yun F;  Wang YQ Chinese Acad Sci Inst Semicond State Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
Adobe PDF(958Kb)  |  收藏  |  浏览/下载：1176/287  |  提交时间：2010/10/29
Amorphous-silicon  Crystallization  Transistors  
High brightness AlGaInP orange light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Li YZ;  Wang GH;  Ma XY;  Peng HI;  Wang ST;  Chen LH;  Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1273/359  |  提交时间：2010/10/29
High Brightness  Led  Mocvd  Algainp  
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Wang GH;  Ma XY;  Zhang YF;  Peng HI;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1335/352  |  提交时间：2010/10/29
Led  Coupled Distributed Bragg Reflector  Mocvd  Algainp